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Journal Articles

Dynamics of water in a catalyst layer of a fuel cell by quasielastic neutron scattering

Ito, Kanae; Yamada, Takeshi*; Shinohara, Akihiro*; Takata, Shinichi; Kawakita, Yukinobu

Journal of Physical Chemistry C, 125(39), p.21645 - 21652, 2021/10

 Times Cited Count:4 Percentile:29.65(Chemistry, Physical)

Journal Articles

Water distribution in Nafion thin films on hydrophilic and hydrophobic carbon substrates

Ito, Kanae; Harada, Masashi*; Yamada, Norifumi*; Kudo, Kenji*; Aoki, Hiroyuki; Kanaya, Toshiji*

Langmuir, 36(43), p.12830 - 12837, 2020/11

 Times Cited Count:13 Percentile:58.64(Chemistry, Multidisciplinary)

Journal Articles

Experimental investigation of the glass transition of polystyrene thin films in a broad frequency range

Inoue, Rintaro*; Kanaya, Toshiji*; Yamada, Takeshi*; Shibata, Kaoru; Fukao, Koji*

Physical Review E, 97(1), p.012501_1 - 012501_6, 2018/01

 Times Cited Count:9 Percentile:62.54(Physics, Fluids & Plasmas)

In this study, we investigate the $$alpha$$ process of a polystyrene thin film using inelastic neutron scattering (INS), dielectric relaxation spectroscopy (DRS), and thermal expansion spectroscopy (TES). The DRS and TES measurements exhibited a decrease in glass transition temperature ($$T_{rm g}$$) with film thickness. On the other hand, an increase in $$T_{rm g}$$ was observed in INS studies. In order to interpret this contradiction, we investigated the temperature dependence of the peak frequency ($$f_{rm m}$$) of the $$alpha$$ process probed by DRS and TES. The experiments revealed an increase in the peak frequency ($$f_{rm m}$$) with decreasing film thickness in the frequency region. This observation is consistent with the observed decrease in $$T_{rm g}$$ with thickness. The discrepancy between INS and DRS or TES descriptions of the $$alpha$$ process is likely to be attributed to a decrease in the apparent activation energy with film thickness and reduced mobility, due to the impenetrable wall effect.

Journal Articles

MCD measurement at the Tb $$M$$$$_{4,5}$$-edges of Tb$$_{17}$$Fe$$_{x}$$Co$$_{(83-x)}$$ perpendicular magnetization films

Agui, Akane; Mizumaki, Masaichiro*; Asahi, Toru*; Sayama, Junichi*; Matsumoto, Koji*; Morikawa, Tsuyoshi*; Nakatani, Takeshi; Matsushita, Tomohiro*; Osaka, Tetsuya*; Miura, Yoshimasa*

Transactions of the Magnetics Society of Japan, 4(4-2), p.326 - 329, 2004/11

The electronic and spin state of the perpendicular magnetization film Tb$$_{17}$$Fe$$_{x}$$Co$$_{(83-x)}$$ was investigated by means of magnetic circular dichroism spectroscopy for each element. The samples are Tb$$_{17}$$Fe$$_{x}$$Co$$_{(83-x)}$$ while the ratio of a rare-earth metal Tb to transition metals Fe and Co is constant, the composition ratio of Fe and Co is changed. Changing the ratio, we estimated the expected orbital moments $$<$$$$L$$$$_{z}$$$$>$$ of Tb 4f electrons. The macroscopic magnetic property is studied from the microscopic point of view.

Journal Articles

Structure of sub-monolayered silicon carbide films

Baba, Yuji; Sekiguchi, Tetsuhiro; Shimoyama, Iwao; Nath, K. G.

Applied Surface Science, 237(1-4), p.176 - 180, 2004/10

 Times Cited Count:9 Percentile:43.98(Chemistry, Physical)

no abstracts in English

Journal Articles

3-45MeV/u ion beam dosimetry using thin film dosimeters

Kojima, Takuji; Sunaga, Hiromi; Takizawa, Haruki*; Hanaya, Hiroaki; Tachibana, Hiroyuki*

Radiation Physics and Chemistry, 68(6), p.975 - 980, 2003/12

 Times Cited Count:2 Percentile:19(Chemistry, Physical)

Four kinds of film dosimeters well-characterized for low LET radiations were applied to 3-45 MeV/u ions. The dose responses relative to those for low LET radiations are almost one up to about 10 MeV/(mg/cm$$^{2}$$) and gradually become smaller with increase of the stopping power. Overall uncertainty in ion beam dosimetry using these characterized dosimeters is better than $$pm$$5%(1$$sigma$$) including uncertainty in fluence measurement($$pm$$2%). Lateral and depth dose profile measurements were achievable using characterized Gafchromic dosimeters with the spatial resolution of better than 1 and 10 $$mu$$m, respectively.

Journal Articles

Laser detection of surface acoustic waves as a method of measuring an Ar ion beam modification of carbon thin film

Kitazawa, Shinichi; Putra, P.; Sakai, Seiji; Narumi, Kazumasa; Naramoto, Hiroshi; Yamamoto, Shunya; Chiba, Atsuya

Nuclear Instruments and Methods in Physics Research B, 206, p.952 - 955, 2003/05

 Times Cited Count:6 Percentile:43.07(Instruments & Instrumentation)

Pulsed energy impacts are expected to generate the elastic waves reflecting the elastic properties of impacted substances. Among the generated waves, the surface acoustic waves (SAW) can be more specific to the surface structures and can be used effectively in the characterization of thin films in a non-destructive way. In the present study, pulsed laser impacts were employed to generate SAWs on a thin film and the SAWs are detected with a laser reflection technique. To test the effectiveness of this method, an amorphous carbon films were irradiated with 13 keV Ar ions at room temperature in a broad range and the SAW propagation velocity was evaluated as a function of Ar ion dose. The present preliminary experiment using pulsed laser suggests the successful detection of SAW from typical substances with different modulus of elasticity such as fcc metals, oxides and semi conducting materials.

Journal Articles

RHEED observation of BaTiO$$_3$$ thin films grown by MBE

Yoneda, Yasuhiro; Sakaue, Kiyoshi*; Terauchi, Hikaru*

Surface Science, 529(3), p.283 - 287, 2003/04

 Times Cited Count:8 Percentile:42.93(Chemistry, Physical)

Ferroelectric BaTiO$$_3$$ thin filmwith a thickness of 10ML were epitaxally grown on SrTiO$$_3$$ (001) substrate by very slow deposition using MBE. The investigation were carried out by two growth methods: (i) codeposition and (ii) alternate deposition. In-situ observation of RHEED confirmed that an epitaxial cube-on-cube structure was prepared. After the deposition, X-ray diffraction measurements were carried out. The 10-ML-thick BaTiO$$_3$$ films were highly ${it c}$-axis oriented single crystals with good film quality.

Journal Articles

Recent activities and progress on PORE reflectometer

Takeda, Masayasu; Torikai, Naoya*; Ino, Takashi*; Tasaki, Seiji*

KENS Report-XIV, p.205 - 206, 2003/00

no abstracts in English

Journal Articles

Dosimetry for 3-45 MeV/u ion beams using thin film dosimeters

Kojima, Takuji; Sunaga, Hiromi; Takizawa, Haruki; Hanaya, Hiroaki; Tachibana, Hiroyuki*

JAERI-Review 2002-035, TIARA Annual Report 2001, p.123 - 124, 2002/11

Thin film dosimeters of about 10-200 mm in thickness, which were well -characterized for $$^{60}$$Co $$gamma$$-rays or 2-MeV electrons, have been applied to dosimetry for ion beams. For development of dosimetry covering the dose range of 0.005 to 200 kGy with high precision within $$pm$$5%, the linear energy transfer (LET) characteristics of thin films were studied involving development of precise fluence measurement. Dose mapping technique was also developed achieving high spatial resolution values of about 1$$mu$$m and $$<$$10$$mu$$m for lateral and depth directions respectively. The outline of the recent development is summarized in this paper.

Journal Articles

Preparation of TiO$$_{2}$$-anatase film on Si(001) substrate with TiN and SrTiO$$_{3}$$ as buffer layers

Sugiharuto; Yamamoto, Shunya; Sumita, Taishi; Miyashita, Atsumi

Journal of Physics; Condensed Matter, 13(13), p.2875 - 2881, 2001/04

 Times Cited Count:15 Percentile:61.85(Physics, Condensed Matter)

An epitaxial TiO$$_{2}$$-anatase thin film was grown on the Si(001) substrate with SrTiO$$_{3}$$/TiN as the buffer layers by pulsed laser deposition technique under an oxygen gas supply. The characterization of the epitaxial TiO$$_{2}$$-anatase film was performed using the X-ray diffraction method. The crystallographic relationships between the TiO$$_{2}$$-anatase film and SrTiO$$_{3}$$/TiN buffer layers were analyzed by the $$theta$$-2$$theta$$ scan and pole figure measurement. The growth direction of the films was determined as $$rm TiO_{2}langle 001rangle$$ / $$rm SrTiO_{3}langle 001rangle$$ / $$rm TiNlangle 001rangle$$ / $$rm Silangle 001rangle$$ and their in-plane relationship $$rm TiO_{2}{110}$$ // $$rm SrTiO_{3}{100}$$ // $$rm TiN{100}$$ // $$rm Si{100}$$. The crystalline quality of TiO$$_{2}$$-anatase was examined by the rocking curve analysis. The composition of the thin film packaging was characterized by Rutherford backscattering spectrometry (RBS) using 2.0 MeV $$^{4}$$He beam.

Journal Articles

Application of thin film dosimeters for 3-45MeV/amu ion beams

Kojima, Takuji; Sunaga, Hiromi; Takizawa, Haruki; Tachibana, Hiroyuki

JAERI-Conf 2000-001, p.310 - 313, 2000/03

no abstracts in English

Journal Articles

A Three-step process for epitaxial growth of (111)-oriented C$$_{60}$$ films on alkali-halide substrates

Dai, Z.*; Naramoto, Hiroshi; Narumi, Kazumasa; Yamamoto, Shunya; Miyashita, Atsumi

Thin Solid Films, 360(1), p.28 - 33, 2000/02

 Times Cited Count:2 Percentile:15.67(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Dosimetry systems for characteristics study of thin film dosimeters, 4; Fluence measurement and LET characteristics study of film dosimeters

Kojima, Takuji; Sunaga, Hiromi; Takizawa, Haruki; Tachibana, Hiroyuki

JAERI-Review 99-025, TIARA Annual Report 1998, p.100 - 102, 1999/10

no abstracts in English

Journal Articles

Structural, optical and electrical properties of laser deposited FeTiO$$_{3}$$ films on C- and A-cut sapphire substrates

Dai, Z.*; Naramoto, Hiroshi; Narumi, Kazumasa; Yamamoto, Shunya; Miyashita, Atsumi

Journal of Applied Physics, 85(10), p.7433 - 7437, 1999/05

 Times Cited Count:22 Percentile:67.9(Physics, Applied)

no abstracts in English

Journal Articles

Self-mediated growth of single-crystal and entirely(111)-oriented C$$_{60}$$ films on alkali halide substrates

Dai, Z.*; Naramoto, Hiroshi; Narumi, Kazumasa; Yamamoto, Shunya; Miyashita, Atsumi

Applied Physics Letters, 74(12), p.1686 - 1688, 1999/03

 Times Cited Count:5 Percentile:28.48(Physics, Applied)

no abstracts in English

Journal Articles

Semiconductor-metal phase transition in VO$$_{2}$$ films synthesized on $$alpha$$-Al$$_{2}$$O$$_{3}$$ by oxygen-reactive deposition using a neodymium-doped yttrium aluminium garnet laser

P.Zhu*; Yamamoto, Shunya; Miyashita, Atsumi; Wu, Z.*; Narumi, Kazumasa; Naramoto, Hiroshi

Philos. Mag. Lett., 79(8), p.603 - 608, 1999/00

 Times Cited Count:5 Percentile:45.39(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Study on ferroelectric domains in BaTiO$$_3$$ crystalline films and bulk crystals by atomic force and scanning electron microscopies

Tsunekawa, Shin*; Fukuda, Tsuguo*; Ozaki, Toru*; Yoneda, Yasuhiro; Okabe, Toru*; Terauchi, Hikaru*

Journal of Applied Physics, 84(2), p.999 - 1002, 1998/06

 Times Cited Count:16 Percentile:59.5(Physics, Applied)

no abstracts in English

Journal Articles

Polymerisation process of 1,6-di(N-carbazolyl)-2,4-hexadiyne epitaxially grown films studied by high-resolution electron microscopy

*; Isoda, S.*; Kurata, Hiroki; *; *; Kobayashi, Takashi*

Polymer, 39(3), p.591 - 597, 1998/00

 Times Cited Count:5 Percentile:26.75(Polymer Science)

no abstracts in English

Journal Articles

FTIR reflection absorption spectroscopy for organic thin film on ITO substrate

Tamada, Masao; Koshikawa, Hiroshi; Hosoi, Fumio; Suwa, Takeshi

Thin Solid Films, 315(1-2), p.40 - 43, 1998/00

 Times Cited Count:12 Percentile:55.73(Materials Science, Multidisciplinary)

no abstracts in English

34 (Records 1-20 displayed on this page)